CIONE 4” is a dual mode plasma system that enables both Plasma Etching and Reactive Ion Etching in one machine, a compact solution for etching of various substances as well as surface treatments (Sample Size: 4-inch wafer)

Key Features:

• Dual Mode: RIE (Ion Domination) & PE (Neutral Domination)
• Single Block Aluminum Chamber 140 × 200 × 110 mm (W×D×H)
• Uniform Gas Flow Inside the chamber (Patent No. 10-1697205)
• LF Generator (Frequency: 20~100kHz / Power: Max.100W)
• Mass Flow Controller (Max. 100sccm / up to 3 channels)
• System Geometry: 440 × 500 × 560 mm (W×D×H)

 

Applications:

• Semiconductor Research
• Polymer Etching
• 2D Materials
• Micro-electromechanical Systems
• Bio & Life science

Chemical & Material Engineering